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Other articles related with "quantum efficiency"：
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47801 |
Rui Li(李睿), Ming-Sheng Xu(徐明升), Peng Wang(汪鹏), Cheng-Xin Wang(王成新), Shang-Da Qu(屈尚达), Kai-Ju Shi(时凯居), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武) |
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Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content |
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Chin. Phys. B
2021 Vol.30 (4): 47801-
[Abstract]
(375)
[HTML 1 KB]
[PDF 2584 KB]
(45)
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47802 |
Lu Xue(薛露), Yi Li(李毅), Mei Ge(葛梅), Mei-Yu Wang(王美玉), and You-Hua Zhu(朱友华) |
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Optical polarization characteristics for AlGaN-based light-emitting diodes with AlGaN multilayer structure as well layer |
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Chin. Phys. B
2021 Vol.30 (4): 47802-
[Abstract]
(280)
[HTML 1 KB]
[PDF 711 KB]
(26)
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47303 |
Jiao-Xin Guo(郭娇欣), Jie Ding(丁杰), Chun-Lan Mo(莫春兰), Chang-Da Zheng(郑畅达), Shuan Pan(潘拴), Feng-Yi Jiang(江风益) |
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Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate |
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Chin. Phys. B
2020 Vol.29 (4): 47303-047303
[Abstract]
(525)
[HTML 1 KB]
[PDF 1344 KB]
(187)
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18503 |
Byung-Ryool Hyun, Mikita Marus, Huaying Zhong(钟华英), Depeng Li(李德鹏), Haochen Liu(刘皓宸), Yue Xie(谢阅), Weon-kyu Koh, Bing Xu(徐冰), Yanjun Liu(刘言军), Xiao Wei Sun(孙小卫) |
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Infrared light-emitting diodes based on colloidal PbSe/PbS core/shell nanocrystals |
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Chin. Phys. B
2020 Vol.29 (1): 18503-018503
[Abstract]
(673)
[HTML 1 KB]
[PDF 1218 KB]
(178)
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118103 |
Qianqian Wu(吴倩倩), Fan Cao(曹璠), Lingmei Kong(孔令媚), Xuyong Yang(杨绪勇) |
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InP quantum dots-based electroluminescent devices |
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Chin. Phys. B
2019 Vol.28 (11): 118103-118103
[Abstract]
(692)
[HTML 1 KB]
[PDF 4160 KB]
(328)
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58502 |
Guang Li(李光), Lin-Yuan Wang(王林媛), Wei-Dong Song(宋伟东), Jian Jiang(姜健), Xing-Jun Luo(罗幸君), Jia-Qi Guo(郭佳琦), Long-Fei He(贺龙飞), Kang Zhang(张康), Qi-Bao Wu(吴启保), Shu-Ti Li(李述体) |
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Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer |
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Chin. Phys. B
2019 Vol.28 (5): 58502-058502
[Abstract]
(821)
[HTML 1 KB]
[PDF 494 KB]
(264)
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104207 |
Lin-Dong Ma(马林东), Yu-Dong Li(李豫东), Lin Wen(文林), Jie Feng(冯婕), Xiang Zhang(张翔), Tian-Hui Wang(王田珲), Yu-Long Cai(蔡毓龙), Zhi-Ming Wang(王志铭), Qi Guo(郭旗) |
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Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor |
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Chin. Phys. B
2018 Vol.27 (10): 104207-104207
[Abstract]
(652)
[HTML 1 KB]
[PDF 604 KB]
(220)
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114212 |
Lindong Ma(马林东), Yudong Li(李豫东), Qi Guo(郭旗), Lin Wen(文林), Dong Zhou(周东), Jie Feng(冯婕), Yuan Liu(刘元), Junzhe Zeng(曾骏哲), Xiang Zhang(张翔), Tianhui Wang(王田珲) |
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Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors |
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Chin. Phys. B
2017 Vol.26 (11): 114212-114212
[Abstract]
(579)
[HTML 1 KB]
[PDF 643 KB]
(319)
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117102 |
Qiang Li(李强), Yufeng Li(李虞锋), Minyan Zhang(张敏妍), Wen Ding(丁文), Feng Yun(云峰) |
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Current spreading in GaN-based light-emitting diodes |
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Chin. Phys. B
2016 Vol.25 (11): 117102-117102
[Abstract]
(642)
[HTML 1 KB]
[PDF 1077 KB]
(555)
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103201 |
Han Jin(金含), Zhao-Jun Mo(莫兆军), Xiao-Song Zhang(张晓松), Lin-Lin Yuan(苑琳琳), Ming Yan(晏明), Lan Li(李岚) |
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Effect of chloride introduction on the optical properties in Eu3+-doped fluorozirconate glasses |
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Chin. Phys. B
2016 Vol.25 (10): 103201-103201
[Abstract]
(581)
[HTML 1 KB]
[PDF 1093 KB]
(320)
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48505 |
Gang-Cheng Jiao(焦岗成), Zheng-Tang Liu(刘正堂), Hui Guo(郭晖), Yi-Jun Zhang(张益军) |
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Comparison of blue-green response between transmission-mode GaAsP-and GaAs-based photocathodes grown by molecular beam epitaxy |
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Chin. Phys. B
2016 Vol.25 (4): 48505-048505
[Abstract]
(603)
[HTML 1 KB]
[PDF 1005 KB]
(466)
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124215 |
Cao Chen (曹琛), Zhang Bing (张冰), Wu Long-Sheng (吴龙胜), Li Na (李娜), Wang Jun-Feng (王俊峰) |
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A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure |
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Chin. Phys. B
2014 Vol.23 (12): 124215-124215
[Abstract]
(602)
[HTML 1 KB]
[PDF 594 KB]
(482)
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68801 |
Yang Jing (杨静), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Liu Zong-Shun (刘宗顺), Chen Ping (陈平), Li Liang (李亮), Wu Liang-Liang (吴亮亮), Le Ling-Cong (乐伶聪), Li Xiao-Jing (李晓静), He Xiao-Guang (何晓光), Wang Hui (王辉), Zhu Jian-Jun (朱建军), Zhang Shu-Ming (张书明), Zhang Bao-Shun (张宝顺), Yang Hui (杨辉) |
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Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells |
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Chin. Phys. B
2014 Vol.23 (6): 68801-068801
[Abstract]
(595)
[HTML 1 KB]
[PDF 429 KB]
(477)
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88102 |
Wan Tu-Tu (万图图), Ye Zhan-Qi (叶展圻), Tao Tao (陶涛), Xie Zi-Li (谢自力), Zhang Rong (张荣), Liu Bin (刘斌), Xiu Xiang-Qian (修向前), Li Yi (李毅), Han Ping (韩平), Shi Yi (施毅), Zheng You-Dou (郑有炓) |
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The enhancement of light-emitting efficiency using GaN-based multiple quantum well light-emitting diodes with nanopillar arrays |
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Chin. Phys. B
2013 Vol.22 (8): 88102-088102
[Abstract]
(755)
[HTML 1 KB]
[PDF 521 KB]
(716)
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27901 |
Wang Xiao-Hui (王晓晖), Gao Pin (高频), Wang Hong-Gang (王洪刚), Li Biao (李飙), Chang Ben-Kang (常本康) |
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Influence of wet chemical cleaning on quantum efficiency of GaN photocathode |
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Chin. Phys. B
2013 Vol.22 (2): 27901-027901
[Abstract]
(850)
[HTML 1 KB]
[PDF 406 KB]
(1358)
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128504 |
Wang Tian-Hu (王天虎), Xu Jin-Liang (徐进良) |
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Improved efficiency droop characteristics in InGaN/GaN light-emitting diode with a novel designed last barrier structure |
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Chin. Phys. B
2012 Vol.21 (12): 128504-128504
[Abstract]
(1176)
[HTML 1 KB]
[PDF 210 KB]
(786)
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87901 |
Wang Xiao-Hui (王晓晖), Shi Feng (石峰), Guo Hui (郭晖), Hu Cang-Lu (胡仓陆), Cheng Hong-Chang (程宏昌), Chang Ben-Kang (常本康), Ren Ling (任玲), Du Yu-Jie (杜玉杰), Zhang Jun-Ju (张俊举 ) |
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The optimal thickness of transmission-mode GaN photocathode |
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Chin. Phys. B
2012 Vol.21 (8): 87901-087901
[Abstract]
(1450)
[HTML 1 KB]
[PDF 459 KB]
(841)
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58504 |
Chen Jun(陈峻), Fan Guang-Han(范广涵), Zhang Yun-Yan(张运炎), Pang Wei(庞玮), Zheng Shu-Wen(郑树文), and Yao Guang-Rui(姚光锐) |
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Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers |
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Chin. Phys. B
2012 Vol.21 (5): 58504-058504
[Abstract]
(1579)
[HTML 1 KB]
[PDF 475 KB]
(811)
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44209 |
Niu Jun(牛军), Zhang Yi-Jun(张益军), Chang Ben-Kang(常本康), and Xiong Ya-Juan(熊雅娟) |
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Influence of varied doping structure on photoemissive property of photocathode |
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Chin. Phys. B
2011 Vol.20 (4): 44209-044209
[Abstract]
(1479)
[HTML 1 KB]
[PDF 308 KB]
(834)
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37902 |
Fu Xiao-Qian(付小倩), Chang Ben-Kang(常本康), Wang Xiao-Hui(王晓晖), Li Biao(李飙), Du Yu-Jie(杜玉杰), and Zhang Jun-Ju(张俊举) |
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Photoemission of graded-doping GaN photocathode |
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Chin. Phys. B
2011 Vol.20 (3): 37902-037902
[Abstract]
(1334)
[HTML 1 KB]
[PDF 223 KB]
(1199)
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28502 |
Zhou Peng(周鹏), Li Chun-Fei(李淳飞), Liao Chang-Jun(廖常俊), Wei Zheng-Jun(魏正军), and Yuan Shu-Qiong(袁书琼) |
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Numerical analysis of In0.53Ga0.47As/InP single photon avalanche diodes |
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Chin. Phys. B
2011 Vol.20 (2): 28502-028502
[Abstract]
(1319)
[HTML 0 KB]
[PDF 280 KB]
(1486)
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17204 |
Chen Yi-Xin(陈依新),Shen Guang-Di(沈光地),Guo Wei-Ling(郭伟玲), Xu Chen(徐晨), and Li Jian-Jun(李建军) |
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Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs) |
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Chin. Phys. B
2011 Vol.20 (1): 17204-017204
[Abstract]
(1706)
[HTML 0 KB]
[PDF 651 KB]
(1397)
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